Study of the recombination mechanisms and carrier lifetimes in Hg0.8Cd0.2Te alloy

摘要

Using the basic theories of carrier recombination in Hg$-0.8$/Cd$-0.2$/Te materials, the recombination problems in MCT of x $EQ 0.2 are studied and the variation in carrier lifetime with carrier concentration, doping density, the density of S-R centers, the energy level of S-R centers, and temperature in n and p-type Hg$-0.8$/Cd$-0.2$/Te are obtained. In addition, the recombination mechanisms in the materials mentioned are analyzed.