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Realization conditions of the mositure-sensitivity mechanicms of MOS tunnel structures

机译:MOS隧道结构湿敏机理的实现条件

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The paper presents the results for determining the realization conditions of the moisture sensitivity mechanisms of metal-tunneling silicon oxide-silicon structures. HTe increae in the measured capacitance of the structrues with the increase in the air uumidity is shown in a general case to be connected with water molecules adsorption by the thin porous oxide layer, which leads to the increase in the permittivity of the layer on one hand, and to a change of the charge state near the silicon-oxide interface on the other. Prevalance of one mechanism over the other de-pends on the electrical bias mode at the MOS tunnel structure.
机译:提出了确定金属隧道氧化硅-硅结构湿敏机理实现条件的结果。通常,随着空气湿度的增加,结构的测量电容中的HTe增量与薄多孔氧化物层吸附的水分子有关,一方面导致层的介电常数增加,并改变另一个硅氧化物界面附近的电荷状态。一种机制优于另一种机制取决于MOS隧道结构的电偏置模式。

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