The photosensitivity of As$-x$/Sb(Ge)$-y$/S$-100-x-y$/ (x equals 35 - 45, y equals 0 - 6) films to light with wavelength 488 nm was investigated. The value of photosensitivity was quantified using the results of chemical etching in amine solutions for as-deposited and exposed films. It was found the exposure required to obtain the optimal relief depth, which is from 0.1 to 0.3 micrometer for holographic gratings, decreases with both sulfur and antimony content from about 2 J/cm$+2$/ for As$-2$/S$-3$/ to about 0.3 J/cm$+2$/ for As$-30$/Sb$- 4$/S$-66$/. The photosensitivity of the Ge doped films is sharp decreased with Ge content. A model of effect of additives on the change of dissolution kinetics was proposed. It is based on the consideration of a photopolymerization of films leading to the formation of the insoluble network of AsS$-3/2$/ structural units.
展开▼
