It has recently been discovered that a room temperature hydrogen plasma could reduce the crystallization time at 600/spl deg/C of hydrogenated amorphous silicon films by a factor of five to a reasonable four hours. Further, the process can be spatially controlled by masking with a patterned oxide. In this abstract, we report for the first time the successful application of this method to an all low-temperature (/spl les/600/spl deg/C) TFT fabrication process. Good performance with mobility of 40-35 cm/sup 2//Vs and an ON/OFF ratio of 4/spl times/10/sup 5/ has been achieved with a crystallization time of only four hours.
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