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Pulsed laser deposition of ferroelectric thin films for active microwave electronic devices

机译:用于有源微波电子设备的铁电薄膜的脉冲激光沉积

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Abstract: High quality thin films of Sr$-x$/Ba$-(1-x)$/TiO$-3$/ are currently being grown using pulsed laser deposition (PLD). These films are being used for the construction of frequency tunable microwave electronic devices. In particular, a low phase noise, voltage controlled oscillator (1.5 - 2.5 GHz) is currently being developed. Single phase and oriented Sr$- x$/Ba$-(1-x)$/TiO$-3$/ films have been deposited by PLD onto (100) LaAlO$-3$/ and MgO and single crystal Ag films. The dielectric properties of these films has been measured at 1 MHz and between 1 and 20 GHz. A 75% change in the capacitance can be achieved using a 40 V bias across a 5 micrometer interdigital capacitor gap (80 kV/cm). The dissipation factor (measured at 1 MHz) depends on film composition and temperature. Dielectric loss measurement at 1 - 20 GHz have shown a dielectric loss tangent as small as 1.25 multiplied by 10$+$MIN@2$/. !8
机译:摘要:高品质薄膜的SR $ -x $ / ba $ - (1-x)$ / tio $ -3目前正在使用脉冲激光沉积(pld)生长。这些薄膜用于施加频率可调微波电子设备的构造。特别地,目前正在开发低相位噪声,电压控制振荡器(1.5-2.5GHz)。单相和导向的SR $ - x $ / ba $ - (1-x)$ / tio $-$-$ 3 $ /电影已被PLD存放到(100)LAALO $ -3 $ /和MgO和单晶AG电影。这些膜的介电性质已经在1MHz和1至20GHz之间测量。可以使用跨越5微米的叉代特性电容器间隙(80kV / cm)的40V偏压来实现电容的75%变化。耗散因子(在1MHz下测量)取决于膜组合物和温度。 1 - 20 GHz的介电损耗测量显示了一个小于1.25的介电损耗切线乘以10 $ + $ min @ 2 $ /。 !8

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