High-rate deposition of a-SiH filmks in 55 kHz glow discharge: growth mechanisms and film structure

摘要

The 55 kHz GD technique allowed the high-rate deposition of a-Si:H films (up to 30 A/s) with good electronic properties in spite of inhomogeneous structure.In this work,we investigated the growth mechanisms and the correlation between plasma parameters and film structure.The electrical parameters of discharge, the properties of plasma and of the films were investigated with using of wide range of methods (optical emission spectroscopy,mass-spectrometry, IR-spectroscopy,atomic force microscopy).