High electric field effects on the thermal generation in hydrogenated amorphous silicon

摘要

We have studied the electric field dependence of the electron-hole thermal generation process in hydrogenated amorphous silicon.A model was develoed which takes into account the Poole-Frenkel effect and the thermally assisted tunneling.In order to explain the experimental results it was necessary to consider a strong electron-lattice interaction describing the carrier tunneling mechanism.Deep defects relaxation is also discussed.