A novel method for fabrication of hydrogenated amorphous silicon and high quality poly-Si films on the same substrate by employing excimer laser

摘要

We have fabricated the a-Si:H film for pixel region and poly-Si film for driver region on the same glass substrate by a rapid thermal process successfully.By employing the halogen lamp,the considerable amount of hydrogen in the PECVD a-Si:H film,which causes the undersirable film ablation due to hydrogen evolution during excimer laser annealing,could be reduced selectively in the peripheral driver area where the a-Si:H film is recrystallized into poly-Si film in order to obtain the high mobility.After rapid thermal annealing,the hydrogen content in a-Si:H films, of which the inherent hydrogen content was found to be about 10-12 at.