Fluctuating defect density probed with noise spectroscopy in hydrogenated amorphous silicon

摘要

Resistance fluctuations have been stduied in hydrogenated amorphous silicon in the temperature range between 300 K and 450 K.The primary noise source has a powe spectrum of approximately 1/f and is ascribed to hydrogen motion.Hopping of weakly bound hydrogen is thermally activatede at such low temperatures with an average activation energy of 0.85 eV.The attempt rate amounts to 7 10~12 s~-1.