Versatile high rate plasma deposition and processing with very high frequency excitation

摘要

The interest in plasma deposition using very high frequency (VHF) excitation arose after the preparation of a-Si:H at high growth rates was demonstrated.Subsequently the improved process flexibility and the contorl of material properties offered by the variation of the plasma excitation frequncy was recognized.The preparation of amorphous and microcrystalline thin films in a VHF-plasma is described.The increased growht rates have been attributed to an enhancement of film precursor formation at VHF, to the decreased sheath thickness as well as to an enhancement of the surface reactivity by positive ions.Plasma diagnostic investigations show that the parameters mainly affected by the excitation frequency are the ion flux to the electrodes as well as the sheaths potentials and widths,rather than the plasma density.