Pulsed-laser crystallized highly conductive boron-doped microcrystalline silicon

摘要

The preparation of seed lattices,using hree interfering beams (TIB) from a pulsed Nd-YAG laser in a-Si layers of 100 to 400 nm thickness is introduced and applied for seeded laser or thermally induced crystallization of a-Si on Corning 7059 glass.The structural and electronic properties of the um c-Si layers are investigated by X-ray,electron- and atomic force microscopy, Hall and conductivity measurements. In highly boron-doped um c-Si,grains up to 1.3 um m in diameter are detected,giving rise to conductivities of approx approx 2000 S/cm and hole mobilities of approx 10 cm~2/Vs.