Stacking fault trapezoids, stacking fault tubes and stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers

摘要

The fault planes and stair-rod dislocations in stacking fault trapezoid, stacking fault tube and stacking fault tetrahedron have been characterized with reference to the stacking fault pyramid in ZnSe/GaAs(001) pseudomorphic epilayers. All stacking fault configurations can be regarded as originating from an array of dimers on the (001) interface. The extended stair-rod dislocation dipoles in stacking fault trapezoids and tubes can act as diffusion channels for pipe diffusion of point defects during degradation.