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Crack interactions in tensile-strained epilayers

机译:拉伸抗拉丝脱落剂的裂纹相互作用

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When epilayers are grown under tensile strain cracks are formed where the critical thickness, t_c, is exceeded. At thicknesses less than about 4t_c these form a unidirectional array on (110) planes but at a thickness of greater than 6t_c an orthagonal (110) array is introduced. By analysis of the intercrack spacing in (110) gratings a high degree of self ordering is demonstrated. When orthogonal cracks interact three outcomes have been identified, namely "T" junctions, straight intersections and jogs, and it is shown that these are in response to the relative depth of the two cracks at the junctions.
机译:当在拉伸应变裂缝下在超出拉伸应变裂缝时形成,其中超过临界厚度T_C。在厚度小于约4t_c的情况下,这些在(110)平面上形成单向阵列,但厚度大于6t_c,引入了orthagonal(110)阵列。通过分析(110)光栅中的间隔间距,证明了高度的自动排序。当已经识别出正交的裂缝相互作用三种结果时,即“T”结,直交叉点和慢跑,并且表明这些是响应于交叉点处的两个裂缝的相对深度。

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