TEM and TED Studies of order-induced GaInP heterostructures grown by organometallic vapour phase epitaxy

摘要

The effects of V/III ratio on ordering and antiphase boundaries (APBs) in Ga_(0.5)In_(0.5)P layers grown on GaAs vicinal substrates at 670 deg C have been investigated using TEM and TED. The degree of order was higher in the layer grown using a V/III ratio of 160 than in the layer grown using a V/III ratio of 40. The higher V/II ratio could be used to suppress APBs. In addition, the order-induced heterostructures could be used to block the propagation of APBs. Possible mechanisms are proposed to describe these phenomena.