High-speed, low-power InSb transistors

摘要

High-speed, low-power consumption field-effect transistors fabricated from InSb/In/sub 1-x/Al/sub x/Sb are demonstrated. A 0.7 /spl mu/m gate-length enhancement-mode device shows an f/sub T/, of 74 GHz, and an f/sub max/ of 89 GHz, at a drain voltage below 0.5 V. This is the fastest reported transistor for its gate length, as far as is known.