Far-infrared lasing due to intracenter optical transitions in Ge

摘要

Abstract: Stimulated emission of far-IR radiation from uniaxially compressed p-Ge in strong electric fields is shown to be due to population inversion of strain split acceptor levels. The peak corresponding to the optical transitions between split- off and ground acceptor states is found in the spectrum of stimulated emission. The strong frequency tuning by stress due to pressure dependence of the energy splitting of these states is obtained. The inversion takes place as the split- off acceptor state is in the valence band continuum. !9