Abstract: Nonlinear photoinduced absorption of hydrogenated amorphous silicon (a-Si:H) was studied by excitation spectroscopy. The experimentally obtained excitation spectra are in compliance with the spectra of unperturbed absorption in 1.2 - 3.2 eV spectral range. The applicability of the method for the absorption coefficient measurement in broad range of 1 - 10$+5$/ cm$+$MIN@1$/ (1 $mu@m film) is demonstrated. A proposed model of photoinduced absorption from localized states is discussed.!17
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机译：摘要：通过激发光谱研究了氢化非晶硅（a-Si：H）的非线性光诱导吸收。实验获得的激发光谱与1.2-3.2 eV光谱范围内无干扰吸收的光谱一致。证明了该吸收系数测量方法在1-10 $ + 5 $ / cm $ + $ MIN @ 1 $ /（1μm薄膜）的广泛范围内的适用性。讨论了一种从局部状态引起的光致吸收的拟议模型！17
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