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Basic Study on Polymer-Insulated DC Cable: the effect of the morphology on the interface on DC characteristics of cables

机译:聚合物绝缘直流电缆的基础研究:界面形态对电缆直流特性的影响

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For a basic study for the development of polymer-insulated DC cables, we examined the effect of the morphology on the interface between two insulation layers and that of between a semi-conductor layer and an insulation layer, on the DC characteristics, particularly focusing the attention on the space charge accumulation and the breakdown stress. The investigation led to the following conclusions: (1)In case of a sample bonded with two insulation plates at a temperature of 130°C, a vertical column-like crystal structure was formed in the region at a depth of about 10-20 μ m from the interface between two insulation layers. However, for a sample bonded at a temperature of 180°C, spherulites could be observed in all regions with no traces of the interface. In case of a sample bonded with a semi-conductor and an insulation, a vertical column-like crystal structure was observed in the insulation region at a depth of about 20-30 μ m from the interface. (2)For a sample formed a vertical column-like crystal structure around the interface, the hetero charge accumulation was observed on the interface. The number of accumulated charges increases, if the temperature of a sample during a voltage application is higher. (3)The DC breakdown strength was almost similar regardless of the difference of the morphology on the interface.
机译:在开发聚合物绝缘直流电缆的基础研究中,我们研究了形态对两个绝缘层之间以及半导体层和绝缘层之间的界面对直流特性的影响,特别关注了注意空间电荷的积累和击穿应力。研究得出以下结论:(1)如果样品在130°C的温度下用两块绝缘板粘合,则在约10-20μm的深度区域会形成垂直的柱状晶体结构。 m距两个绝缘层之间的界面。但是,对于在180°C温度下粘合的样品,在所有区域都可以观察到球晶,没有界面痕迹。在将样品与半导体和绝缘体结合的情况下,在绝缘区域中在距界面约20-30μm的深度处观察到垂直的柱状晶体结构。 (2)对于在界面周围形成垂直柱状晶体结构的样品,在界面上观察到杂电荷累积。如果在电压施加期间样品的温度较高,则累积电荷的数量会增加。 (3)不论界面形态如何不同,直流击穿强度都几乎相同。

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