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Effect of Semi-Conductive Layer Modified by Magnetic Particle SrFe12O19 on Charge Injection Characteristics of HVDC Cable

机译:磁性粒子SrFe12O19修饰的半导电层对HVDC电缆电荷注入特性的影响

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摘要

For high voltage direct current (HVDC) cable, a semi-conductive layer lies between the conductor and the insulation layer; as the charge migrates the path from the conductor to the insulation material, it will affect space charge injection. In this work, the research idea of changing the injection path of moving charges within semi-conductive layer by magnetic particles was proposed. Semi-conductive composites with different SrFe12O19 contents of 1 wt.%, 5 wt.%, 10 wt.%, 20 wt.%, and 30 wt.% were prepared, and the amount of injected charges in the insulation sample was characterized by space charge distribution, polarization current, and thermally-stimulated depolarization current. The experimental results show that a small amount of SrFe12O19 can significantly reduce charge injection in the insulation sample, owing to the deflection of the charge migration path, and only part of the electrons can enter the insulation sample. When the content is 5 wt.%, the insulation sample has the smallest charge amount, 0.89 × 10−7 C, decreasing by 37%, and the steady-state current is 6.01 × 10−10 A, decreasing by 22%. When SrFe12O19 content exceeds 10 wt.%, the charge suppression effect is not obvious and even leads to the increase of charge amount in the insulation sample, owing to the secondary injection of charges. Most moving charges will deflect towards the horizontal direction and cannot direct access to the insulation sample, resulting in a large number of charges accumulation in the semi-conductive layer. These charges will seriously enhance the interface electric field near the insulation sample, leading to the secondary injection of charges, which are easier to inject into the insulation sample.
机译:对于高压直流(HVDC)电缆,在导体和绝缘层之间有一个半导电层。随着电荷将路径从导体迁移到绝缘材料,它将影响空间电荷注入。在这项工作中,提出了通过磁性粒子改变半导体层内移动电荷注入路径的研究思路。制备具有不同的SrFe12O19含量分别为1 wt。%,5 wt。%,10 wt。%,20 wt。%和30 wt。%的半导电复合材料,并通过以下方式表征绝缘样品中的注入电荷量:空间电荷分布,极化电流和热激励的去极化电流。实验结果表明,由于电荷迁移路径的偏转,少量的SrFe12O19可以显着减少绝缘样品中的电荷注入,只有一部分电子可以进入绝缘样品。当含量为5 wt。%时,绝缘样品的电荷量最小,为0.89×10 -7 C,降低了37%,稳态电流为6.01×10 -10 A,降低了22%。当SrFe 12 O 19的含量超过10wt。%时,由于二次注入电荷,电荷抑制效果不明显,甚至导致绝缘样品中电荷量的增加。大多数移动的电荷会偏向水平方向,无法直接进入绝缘样品,从而导致大量电荷积聚在半导电层中。这些电荷将严重增强绝缘样品附近的界面电场,导致二次注入电荷,电荷更容易注入绝缘样品中。

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