Ambipolar diffusion length measurements in a-Si:H by constant photocurrent method (CPM)

摘要

Abstract: Diffusion length (L) is one of the major parameters of semiconductor materials and can serve as an objective criterion of their quality. It stipulated the necessity of improvement of existing and development of new experimental methods of determination of the diffusion length. Especially in actuality when such a task is presented for disordered semiconductor materials, which are formed in nonequilibrium conditions, and, strictly speaking, electrophysical characteristics of each prepared sample are unique. !5