Control of defect complex formation in thermally quenched semi-insulating GaAs using capless laser processing

摘要

Abstract: The effect of Laser Processing (LP) on defect complex formation and dissociation in ITC-GaAs was investigated by Surface Photovoltage (SPV), Photoluminescence (PL) and C-V profiling measurements. We propose that the reduction in hole concentration on LP samples is caused by a complexing of C$-As$/ and a laser-induced primary point defect. A clear correlation was found between the introduction of this complex and sample characteristics: these include, enhanced SPV signals, reduced C$- As$/ related PL intensities and a nonuniform distribution of ionized acceptors. In this exploratory work, we have demonstrated the unique influence of LP on the distribution of isolated acceptors and the free carrier concentration.!15