Heteroepitaxy on high-quality GaAs on Si for optical interconnection on Si chip

摘要

Abstract: Recent progress concerning GaAs on Si technology is discussed from the viewpoint of how to suppress the threading dislocation density in GaAs layers to the level of 10$+4$/cm$+2$/ on the basis of recently obtained results. In particular, we consider the effects of new approaches for realizing two-dimensional growth, new materials of buffer layers and insertion layers, post-growth annealing, high energy ion implantation and the confinement of growth areas on the reduction of threading dislocation generation and propagation. !20