Optical FET receivers for neural network a

摘要

Abstract: Optical FET detectors were fabricated in both the MOSIS/Vitesse HGaAs$-3$/ process and the AT&T field-effect-transistor-self-electro-optic effect device (FET-SEED) process. Typical responsivity is in the order of 1,000 A/W and response time in the order of 10 to 100 $mu@sec at 50 nW optical input power. Such high gain detectors through commercially available industrial foundries are especially useful for optical neural network applications where high density integration requires very good uniformity and power dissipation limits the available optical power. The mechanism of such optical FET detectors are discussed. !13