首页> 外文会议>IEE Colloquium on VSAT's in Europe - the Talking is Over, 1995 >Assembly of Bismuth Clusters into Nanowires Using Etched V-Grooves as Templates
【24h】

Assembly of Bismuth Clusters into Nanowires Using Etched V-Grooves as Templates

机译:以蚀刻的V型槽为模板将铋团簇组装成纳米线

获取原文

摘要

The cluster assembly method reported here employs V-grooves as templates for nanowire fabrication. This technique allows the formation of contacted electrically conducting nanowires using simple optical lithography and without painstaking manipulation of the clusters. In-vacuum, temperature dependent I(V) measurements were performed on Bi wires with widths &1 mum and lengths 50 mum. The temperature dependent resistance of the Bi wires is explained by the variation in the carrier concentration in Bi with temperature
机译:本文报道的簇组装方法采用V型槽作为纳米线制造的模板。该技术允许使用简单的光刻技术形成接触的导电纳米线,而无需费力地操作簇。在真空中,对宽度为&1微米且长度为50微米的Bi导线进行与温度相关的I(V)测量。 Bi导线的温度相关电阻可以通过Bi中载流子浓度随温度的变化来解释

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号