A sputter equipment simulation system including molecular dynamical target atom scattering model

摘要

We have developed an advanced sputter equipment simulation system to design the deposition equipment for ULSI with high aspect ratios contact holes. The system is composed of a newly developed target atom scattering model and die profile model with the Monte Carlo (MC) method. The target atom scattering model uses the Molecular Dynamics (MD) technique combined with thermal analysis and derives ejection angle distribution. The simulated results of titanium (Ti) bottom coverage vs. applied voltage agree with experiments within 10% accuracy.