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Measurements and analysis of transient electromagnetic shielding effectiveness for nested shield configurations

机译:嵌套式屏蔽结构的瞬态电磁屏蔽效能的测量和分析

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Electromagnetic (EM) shielding studies on totally closed box shields, one inside the other, were carried out earlier for steady magnetic fields in the frequency range from 50 Hz to 150 kHz and for plane waves from 1 MHz to 1 GHz. The calculated and the experimental values of the shielding effectiveness for a few selected materials like copper, tin-plated iron, Mu-metal and their composites in single and nested configurations, for wall thicknesses in the range of 50 /spl mu/m to 250 /spl mu/m were compared. In order to explain the discrepancies in the calculated and experimental results, need was felt to simplify the experiments and improve the accuracy and sensitivity of the measurements. The present study is a sequel to the one above but differs essentially in two aspects, viz.; (a) the shielding effectiveness is measured for the broadband (DC to 100 MHz) transient, intense (E-field in the range of 50 to 100 kV/m) and fast (rise time less than 10 nano seconds) EM fields generated in a simulation facility, and (b) the closed nested box shields are configured as open ended structures, to overcome the experimental complexities of the former. The transient fields comprising E-field, D-Dot field and B-Dot field, were characterised by indigenously developed sensor probes. A high sensitivity of 750 mV/kV/m has been achieved for the electric field sensor. The open-ended shield structures are made from 1.5 mm. thick aluminium sheets supported at the four corners of the sheets by copper rods of 6 mm. diameter. The corresponding dimensions for the shields are 250/spl times/200/spl times/75 mm. and 200/spl times/150/spl times/50 mm respectively. The paper discusses the results of the measurements thus performed on shielding effectiveness and sufficiently elaborates the design and development of E, D-Dot and B-Dot field probes. Also, discussed are the characteristics of the transient intense EM fields generated in the simulation facility.
机译:电磁(EM)对另一个内部的屏蔽屏蔽的电磁(EM)屏蔽研究在另一个内部进行,频率范围为50Hz至150 kHz的稳定磁场,并且对于从1MHz至1GHz的平面波。计算的诸如单独和嵌套配置中的铜,镀锡铁,μ金属及其复合材料等少数选定材料的屏蔽效能的实验值,用于壁厚为50 / SPL MU / M至250 / SPL mu / m比较。为了解释计算和实验结果中的差异,需要感受到简化实验并提高测量的准确性和敏感性。本研究是上面的续集,但基本上不同于两个方面,viz; (a)宽带(DC至100MHz)瞬态,强烈(E场在50至100 kV / m范围内)和快速(上升时间小于10纳秒)EM场的屏蔽效果仿真设施和(b)封闭的嵌套盒屏蔽配置为开放式结构,以克服前者的实验复杂性。包括E场,D-DOT场和B-DOT字段的瞬态场以本发明开发的传感器探针为特征。对于电场传感器,已经实现了750 mV / kV / m的高灵敏度。开放式屏蔽结构由1.5毫米制成。厚铝板支撑在纸张的四个角,铜棒为6mm。直径。屏蔽的相应尺寸是250 / SPL时间/ 200 / SPL时间/ 75mm。和200 / SPL时/ 150 / SPL次/ 50 mm。本文讨论了对屏蔽效能的测量结果的结果,并且充分地阐述了E,D-DOT和B-DOT场探针的设计和开发。此外,讨论的是模拟设施中产生的瞬态强度EM场的特征。

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