Thermal/electrical behavior of 1 300-nm quad laser arrays in various packaging arrangements

摘要

A number of packaging configurations were explored as possible candidates for use with quad 1300-nm laser arrays operating at aggregate multi-Gb data rates. The packaging arrangements considered were with InP/GaInAsP-based double heterostructure ridge lasers. Quad laser arrays on single chips were packaged both junction up and junction down. Packages included simple CMSH submounts in 9-mm headers and custom wired silicon carriers on multilayered high-speed packages. Electrical and thermal measurements confirmed that T0 can technology will not meet the requirements needed for multi-Gb/s data links. A package that would surpass the requirements would include optimized wire-bond lengths, wire-bond orientation, and sufficient heat-sinking for the laser array and its associated electronics. A packaging arrangement was investigated which included the optimized conditions mentioned above and a custom wired silicon submount. Electrical crosstalk noise was reduced to -37 dB. Thermal effects were reduced to a point where lasers were able to operate at over 110 degrees C. This package surpassed the thermal and electrical crosstalk noise requirements demanded for multi-Gb/s data communication links.