Be doping of InP and GaInAs during metalorganic molecular beam epitaxy

摘要

The results of Hall, secondary ion mass spectrometry (SIMs), and photoluminescence (PL) measurements carried out on Be doped InP and Ga/sub 0.47/In/sub 0.53/As samples grown by metalorganic molecular beam epitaxy (MOMBE) are presented. It is shown that Be redistribution in InP occurs at all doping levels, whereas in Ga/sub 0.47/In/sub 0.53/As, there is little or no Be redistribution up to a level of at least 2*10/sup 19/ cm/sup -3/. The Be doping efficiency is found to be 2.5 times smaller for InP than for Ga/sub 0.47/In/sub 0.53/As. This effect is attributed to the formation of a Be-organic compound on the growing surface with a shorter residence time on InP than on Ga/sub 0.47/In/sub 0.53/As. It is suggested that Be carbide formation in the effusion cells is responsible for a significant reduction in the Be effusion rate. PL studies of Be doped Ga/sub 0.47/In/sub 0.53/As samples indicate that Be concentrations in the 10/sup 17/ cm/sup -3/ range do not significantly reduce the PL intensity, but that higher Be concentrations do.