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Study on Ultrafast Imaging of Silicon Surface Ablated by a Single Nanosecond Laser Pulse

机译:单纳秒激光脉冲烧蚀硅表面的超快成像研究

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We present a technology of ultrafast imagingusing femtosecond laser as probe light and ICCDcamera as imaging instrument. And we obtained timeresolvedICCD images of a single nanosecond laserpulse (30ns laser pulse with a wavelength of 1064nm)ablation of silicon surface taking advantage of thistechnology. This research shows that when a singlenanosecond laser pulse was focused onto the silicontarget, it induced plasma firstly. The produced plasmawas very much and its propagation was very fast atfirst. And when the nanosecond laser pulse passed, theamount and propagation of the plasma didn't increaseany more until it disappeared.
机译:我们提出了超快速成像技术 使用飞秒激光作为探照灯和ICCD 相机作为成像仪器。并且我们获得了时间解决 一纳秒激光的ICCD图像 脉冲(波长为1064nm的30ns激光脉冲) 利用此功能烧蚀硅表面 技术。这项研究表明,当单 纳秒激光脉冲聚焦到硅上 目标,它首先诱发血浆。产生的血浆 非常多,其传播速度非常快 第一的。当纳秒激光脉冲通过时, 血浆的数量和传播没有增加 直到消失。

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