首页> 外文会议>International congress on applications of lasers electro-optics >SELECTIVE FEMTOSECOND LASER STRUCTURING OF A PLATINUM/TANTALUM PENTOXIDE THIN FILM LAYER SYSTEM BY INDUCED LASER ABLATION INVESTIGATED WITH PUMP-PROBE MICROSCOPY
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SELECTIVE FEMTOSECOND LASER STRUCTURING OF A PLATINUM/TANTALUM PENTOXIDE THIN FILM LAYER SYSTEM BY INDUCED LASER ABLATION INVESTIGATED WITH PUMP-PROBE MICROSCOPY

机译:用泵探针显微镜研究诱导激光烧蚀的铂/钽五氧化钛薄膜层系统的选择性激光激光结构。

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A biocompatible sensor chip consists of a 200 nmconducting platinum layer between a glass substrateand a 200 nm tantalum pentoxide layer as insulator ontop. The irradiation of the biochip from the Ta_2O_5 sidewith ultra-short laser pulses ( 660 fs) at a wavelengthof 1053 nm leads to a selective ablation of the Ta_2O_5layer from the platinum. The ablation threshold for theremoval of the Ta_2O_5 layer is about 0.08 J/cm~2.Moreover, the Ta_2O_5 lifts-off in form of an intact diskat a fluence of 0.14 J/cm~2. For deeper understanding ofthe ablation mechanisms, a pump-probe microscopysetup was utilized to record a stop-motion movie of thelift-off process. The setup utilizes an opticallycombined with an electronically delayed probe pulse.For the first time to our knowledge the laser lift-off ofa transparent oxide could be recorded over thecomplete temporal dynamic range. The movies revealthat an intact disk leaves the hole after a few 10 ns. Athigher fluences of about 0.20 J/cm~2 the disk disrupts inseveral particles at about 40 ns.
机译:生物相容性传感器芯片由200 nm组成 玻璃基板之间的导电铂层 并在其上使用200 nm五氧化二钽作为绝缘体 最佳。从Ta_2O_5一侧照射生物芯片 波长超短(660 fs)的激光脉冲 的1053 nm导致Ta_2O_5的选择性烧蚀 铂层。的消融阈值 Ta_2O_5层的去除约为0.08J / cm〜2。 此外,Ta_2O_5以完整磁盘的形式升起 能量密度为0.14 J / cm〜2。深入了解 消融机制,泵浦探针显微镜 设置被用来录制定格动画 升空过程。该设置采用光学方式 结合电子延迟探测脉冲​​。 据我们所知,这是第一次激光剥离 透明的氧化物可以记录在 完整的时间动态范围。电影揭示了 完整的磁盘在10 ns后离开孔。在 大约0.20 J / cm〜2的较高通量,磁盘在 在约40 ns处有几个粒子。

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