Damage to ElectroStatic Discharge Sensitive Electronic Devices by Changing Electrostatic Fields

摘要

This paper demonstrates that very high impedance voltage sensitive device such as MOSFET can be damaged due to external field changes without making contact with other conductors. A simple electronic model is proposed. A neon bulb is used as proxy for the voltage sensitive device in practical non-destructive experiments. Damage was also confirmed using real MOSFET devices.