Programmable Gate Driving Platform for Easy Device Driving and Performance Tuning

摘要

A programmable device driver platform capable of driving most power semiconductor devices and adapting to both voltage source and current source driving schemes is demonstrated here. It enables driving most power electronics devices, including Si IGBT, SiC MOSFET, SiC BJT and GaN HFET. Two-level or multi-level voltage source driving as well as current source driving are also demonstrated to showcase its capability. The programmable driver platform allows user to quickly drive devices and evaluate their performance in dynamic characterization. It also provides a tool for users to quickly optimize their gate driving performance in power electronics converters.