Impedance Models of Double-Well and Three-Barrier Structures

摘要

Impedance models of double-well structure and three-barrier structure are developed and study of such structures characteristics are performed. Analytical expressions for double-well structure input impedance and eigenvalues are obtained. The dependence of double-well structure eigenvalues on the parameters of the structure is studied. The features of electrons resonant tunneling through a three-barrier structure are considered. Transmission coefficient characteristics of the three-barrier structure with different potential wells width are given. It is established that the coupling between three-barrier structure potential wells is capacitive in nature.