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Mechanism Study on Deposition of SiOx Films Produced by Silicone Oil and Ozone Gas

机译:硅油和臭氧气体沉积SiOx薄膜的沉积机理研究

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Silicon oxide (SiOx) films were deposited on Si substrates using APCVD method with silicone oil (S.O.) and ozone (O3) at low temperature of 200 °C. To reduce the amount of -OH bond formed inevitably in the SiOx films due to its deposition reaction, we tried to clarify deposition mechanism. In this study, the influences of silicone oil and ozone supply on the -OH content was studied, and based on those results, the deposition mechanism was discussed.
机译:使用APCVD方法,硅油(S.O.)和臭氧(O)将氧化硅(SiOx)膜沉积在Si基板上 3 )在200°C的低温下。为了减少由于其沉积反应而不可避免地在SiOx膜中形成的-OH键的数量,我们试图阐明沉积机理。在这项研究中,研究了硅油和臭氧供应对-OH含量的影响,并基于这些结果,讨论了沉积机理。

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