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Optoelectronic properties of arginine-doped tungsten disulfide quantum dots synthesized via microwave heating

机译:微波加热合成精氨酸掺杂二硫化钨量子点的光电性能

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Here, the hysteresis and negative photoconductivity (NPC) in arginine-doped tungsten disulfide (WS_2) quantum dots (QDs) synthesized via microwave heating method were investigated and discussed. WS_2 solution and arginine were used as the QDs and dopant sources, respectively. The structure of arginine-doped WS_2 QDs was analyzed by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). The synthesized arginine-doped WS_2 QDs displays a diameter of less than 10 nm and demonstrates an excitation-dependent photoluminescence (PL) behavior. The PL intensity of arginine-doped WS_2 QDs displayed an 18 folds increase compared to the pristine WS2 QDs. The electrical transport demonstrated a p-type doping as a result of the introduction of arginine in WS_2 QDs. Ⅰ-Ⅴ measurements in varying environment and laser illumination were utilized to investigate the hysteresis and negative photoconductivity (NPC) phenomena in arginine-doped WS_2 QDs. Based on this analysis, the hysteresis and NPC are proposed to originate from the interaction of water and/or gas molecules adsorbed on the surface of arginine-doped WS_2 QDs. This optoelectronic study of WS_2 QDs is expected to contribute for the potential development and performance improvement of WS_2-QD-based devices.
机译:在此,研究和讨论了通过微波加热方法合成的精氨酸掺杂二硫化钨(WS_2)量子点(QDs)中的磁滞和负光电导(NPC)。 WS_2溶液和精氨酸分别用作量子点和掺杂源。通过透射电子显微镜(TEM)和X射线光电子能谱(XPS)分析了精氨酸掺杂WS_2 QD的结构。合成的精氨酸掺杂的WS_2 QD的直径小于10 nm,并表现出依赖于激发的光致发光(PL)行为。与原始WS2 QD相比,精氨酸掺杂WS_2 QD的PL强度增加了18倍。由于在WS_2 QD中引入了精氨酸,电迁移显示出p型掺杂。通过在不同环境和激光照射下进行Ⅰ-Ⅴ测量,研究了精氨酸掺杂WS_2量子点中的磁滞现象和负光电导(NPC)现象。基于此分析,提出磁滞和NPC源自精氨酸掺杂WS_2 QD表面吸附的水和/或气体分子的相互作用。这项对WS_2 QD的光电研究有望为基于WS_2-QD的设备的潜在开发和性能改进做出贡献。

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