首页> 外文会议>Conference on Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling >Investigations on heterogeneously coupled Submonolayer (SML) on Stranski-Krastanov (SK) Quantum Dot heterostructures with higher (0.1 ML/sec) and lower (0.05 ML/sec) growth rates
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Investigations on heterogeneously coupled Submonolayer (SML) on Stranski-Krastanov (SK) Quantum Dot heterostructures with higher (0.1 ML/sec) and lower (0.05 ML/sec) growth rates

机译:研究具有较高(0.1 ML / sec)和较低(0.05 ML / sec)增长率的Stranski-Krastanov(SK)量子点异质结构上的异质耦合亚单层(SML)

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We are studying here the heterogeneously coupled Submonolayer (SML) on Stranski-Krastanov (SK) quantum dot (QD) heterostructures. The consolidation in SML on SK heterostructure has been observed by varying growth rate as 0.05 and 0.1 ML/sec. The barrier thickness between SK and SML QDs has also been varied as 5, 7.5, and 10 nm. Pphotoluminescence(PL) study shows transition of carriers with dot size distribution. The peak from SK QDs is prominent in PL spectra of both growth rate samples. The absence of SML peak from the PL might be due to the tunnelling of carriers from SML to SK QDs, which follows the SK ground energy states for recombination. SML peak is visible only in low growth rate sample for barrier thickness of 10 nm, as with higher barrier thickness there is reduction in the probability of tunnelling of carriers. Samples with lower growth rate shows bimodal dot size distribution at barrier thickness 7.5nm, whereas higher growth rate samples shows monomodal dot size distribution. Compressive strains were extracted from high-resolution X-Ray diffraction (HRXRD) measurement. From the HRXRD measurement, it has been found that the strain decreases with increasing barrier thickness. Low growth rate samples have less strain as compared to high growth rate samples. In the lower growth rate samples, PL peak is red shifted as compared to higher growth rate samples due to less strain in the heterostructures and larger size QDs. Therefore, this study will be useful for advanced optoelectronic applications.
机译:我们在这里研究Stranski-Krastanov(SK)量子点(QD)异质结构上的异质耦合亚单层(SML)。通过以0.05和0.1 ML / sec的增长率变化,可以观察到SML在SK异质结构上的固结。 SK和SML QD之间的势垒厚度也已更改为5、7.5和10 nm。 Pphotoluminescence(PL)研究显示了具有点尺寸分布的载流子的跃迁。在两个生长速率样品的PL光谱中,来自SK QD的峰均很显着。 PL中没有SML峰值可能是由于载流子从SML到SK QD的隧穿,这遵循了SK的基能态进行重组。 SML峰仅在势垒厚度为10 nm的低增长率样品中可见,因为势垒厚度越高,载流子隧穿的可能性就越小。具有较低生长速率的样品在7.5nm的阻挡层厚度下显示双峰点尺寸分布,而具有较高生长速率的样品显示单峰点尺寸分布。从高分辨率X射线衍射(HRXRD)测量中提取压缩应变。根据HRXRD测量,发现应变随着势垒厚度的增加而减小。与高生长速率样品相比,低生长速率样品具有较小的应变。在较低生长速率的样品中,由于较高的异质结构应变和较大的QD,与较高生长速率的样品相比,PL峰发生了红移。因此,这项研究对于先进的光电应用将是有用的。

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