Advanced broadband MEMS infrared emitter based on high- temperature-resistant nanostructured surfaces and packaging solutions for harsh environments

摘要

An advanced infrared emitter, consisting of a non-periodic silicium-microstructure and a platinium-nano-composition, which enables extraordinary highly emission intensities is presented. A spectral broadband emission coefficient e of nearly 1 is achieved. The foundation of the emitter is a MEMS hot plate design containing a high temperature stable molybdenum silicide resistance heater layer embedded in a multilayer membrane consisting of silicon nitride and silicon oxide. The temperature resistance of the silicon-platinum micro-nanostructure up to 800 °C is secured by a SiO_2 protection layer. The long-term stability of the spectral behavior at 750 °C has been demonstrated over 10,000 h by FTIR measurements. The low thermal mass of the multilayer MEMS membrane leads to a time constant of 28 ms which enables high chopper frequencies. A precondition for long term stability under rough conditions is a real hermetic housing. High temperature stable packaging technologies for infrared MEMS components were developed.