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SiC Power Module with integrated RC-Snubber Design for Voltage Overshoot and Power Loss Reduction

机译:具有集成式RC缓冲器设计的SiC功率模块,可降低电压过冲和降低功耗

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The maximum voltage overshoot of SiC MOSFETs in power modules limits the switching speed of voltage source inverters in electric vehicles. As the efficiency increases with faster switching transitions, decreased commutation loop inductances allow higher switching speeds at same voltage overshoot level and extend the vehicle’s range. In this research, a SiC power module including an integrated RC-snubber is designed to increase the switching speed at same voltage overshoot. The RC-snubber acts as a damped low inductance commutation loop filtering the switching transients and suppressing the ringing, whereas the low frequency components are filtered by the dc-link capacitor. To meet the target of increased system efficiency, the losses of all inverter components are analyzed for space-vector modulation (SVPWM).
机译:电源模块中SiC MOSFET的最大电压过冲限制了电动汽车中电压源逆变器的开关速度。随着效率的提高和更快的开关转换,换向环路电感的减小允许在相同的电压过冲水平下实现更高的开关速度,并扩展了车辆的行驶范围。在这项研究中,设计了包括集成式RC缓冲器的SiC功率模块,以在相同电压过冲情况下提高开关速度。 RC缓冲器用作阻尼低电感换向环路,对开关瞬变进行滤波并抑制振铃,而低频分量由直流环节电容器滤波。为了达到提高系统效率的目标,对所有逆变器组件的损耗进行了空间矢量调制(SVPWM)分析。

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