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Enhanced Photoelectronic Currents by the Self-Assembled Hybrid Layers of Graphene Oxide Quantum Dot and Liquid Exfoliated Graphene

机译:氧化石墨烯量子点和液体剥落石墨烯的自组装混合层增强了光电电流

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Graphene oxide quantum dots (GOQD) attract great attention for their unique photo-electronic property and promising application potential. However, how to effectively separate the photogenerated carriers of GOQD is still a challenge which need to be overwhelmed for its application as a photoelectrochemical component. Herein, a hybrid film of liquid exfoliated graphene (LEG) with graphene oxide quantum dots (LEG@GOQD) was prepared. The enhanced photocurrents in the LEG@GOQD based device were evidenced in comparison with the only graphene oxide quantum dots (GOQD) based counterpart. It was found, the value of the photocurrent obtained by the LEG@GOQD based device can reach 2.95 μA, while the response time can be 160 ms, respectively. The explanation for the enhanced current is proposed, based on the measured energy band structure of GOQD by the linear sweep voltammetry method and the builtin electric field formed at the interface of GOQD and LEG (Ei). That is to say, the photo generated carriers in the GOQD layer are separated by Ei, transferred to the LEG layer and result in enhanced current. We believe the hybrid LEG and GOQD may be a practicable solution for promoting GOQDs’ application in photo-electrochemistry.
机译:氧化石墨烯量子点(GOQD)因其独特的光电性能和广阔的应用前景而备受关注。然而,如何有效地分离GOQD的光生载流子仍然是一个挑战,对于将其作为光电化学组分的应用而言,这是一个需要克服的挑战。在此,制备了液体剥离的石墨烯(LEG)与氧化石墨烯量子点(LEG @ GOQD)的杂化膜。与仅基于石墨烯氧化物量子点(GOQD)的对应物相比,基于LEG @ GOQD的设备中的光电流得到了增强。发现基于LEG @ GOQD的设备获得的光电流值可以达到2.95μA,而响应时间可以分别为160 ms。基于线性扫描伏安法测得的GOQD能带结构以及GOQD与LEG(Ei)界面处形成的内建电场,提出了增强电流的解释。也就是说,GOQD层中的光生载流子被Ei分开,转移到LEG层,从而导致电流增加。我们相信混合LEG和GOQD可能是促进GOQD在光电化学中应用的可行解决方案。

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