Get rid of S-kink in MZO/CdTe Solar Cells by Performing CdCl2 Annealing without Oxygen

摘要

Magnesium Zinc oxide (MZO), as a promising alternative buffer layer to replace CdS, is predicted to improve both the open circuit voltage and short circuit current, and, therefore, efficiency of CdTe solar cells due to its larger band gap and higher conduction position. However, few published works have achieved these benefits due to the S-kink in J-V curve. Here, the S-kink in MZO/CdTe films is eliminated through performing CdCl2 treatment in oxygen-free atmosphere and as a result, a significant improvement on efficiency (from 9.2% to 16.1%) is achieved.