Nanoprobe-Enabled Electron Beam Induced Current Measurements on III-V Nanowire-Based Solar Cells

摘要

Electron beam induced current (EBIC) is a well-established tool to, among others, locate and analyze p-n junctions, Schottky contacts or heterostructures in planar devices and is now becoming essential to study and optimize devices at the nanoscale, like III-V nanowire (NW) based solar cells. Here, we report on EBIC measurements on III-V single NW solar cells as well as on fully processed NW devices. This paper also highlights the importance of EBIC to optimize short circuit current density values of fully processed nanowire solar cells of 1 mm².