Aqueous Solution Processed Copper Iodide as Hole Transport Material For Planar Inverted Perovskite Solar Cells

摘要

The inorganic carrier transport layers are robust and stable to the environment compared to the organic hole transport layer (HTL). Here, we report on the fabrication of the halide perovskite devices employing CuI as HTL and explored material properties and optoelectronic characterizations. The CuI device demonstrated the device efficiency of 14.1%. The film morphology of CuI is found to have the influence on the perovskite film growth and hence affected on the device parameters. The interface activation energy (E_A) ~E_g suggests the recombination activities in the perovskite bulk is dominant. The capacitance analysis revealed the two trap centers of 0.527 eV and 0.332 eV in the perovskite bulk.