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CdCl2 Activation of the ZnTe:As Back Contact Layer in CdTe Thin Film Solar Cells, Employing a CdS Sacrificial Layer

机译:使用CdS牺牲层的CdTe薄膜太阳能电池中ZnTe:As背接触层的CdCl 2 活化

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Incorporating ZnTe:As back contact to CdTe thin film solar cells is an attractive alternative to Cu treated ZnTe back contacts, getting rid of Cu diffusion and subsequent long term stability issues. However, the Zn loss by the formation of volatile ZnCl2 during CdCl2 deposition heat treatment for the back-contact activation remains a challenge. The aim of this work is to develop an effective activation process for ZnTe:As back contacts, which is expected to improve CdTe solar cell efficiencies. To minimize Zn loss, a thin CdS sacrificial cap layer was evaluated which was deposited on ZnTe:As via MOCVD prior to the contact layer activation step.
机译:在CdTe薄膜太阳能电池中加入ZnTe:As背接触是铜处理的ZnTe背接触的一种有吸引力的替代方法,它消除了Cu扩散和随之而来的长期稳定性问题。但是,锌的挥发是由于形成挥发性的ZnCl 2 在氯化镉期间 2 用于背接触激活的沉积热处理仍然是一个挑战。这项工作的目的是为ZnTe:As背触点开发有效的活化工艺,有望提高CdTe太阳能电池的效率。为了最小化Zn的损失,评估了一个薄的CdS牺牲盖层,该层在接触层激活步骤之前通过MOCVD沉积在ZnTe:As上。

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