首页> 外文会议>IEEE Electronic Components and Technology Conference >Characterization of the Current Mechanisms and Improved Leakage Current in Silver Doped Barium Strontium Titanate
【24h】

Characterization of the Current Mechanisms and Improved Leakage Current in Silver Doped Barium Strontium Titanate

机译:掺银钛酸锶锶钡的电流机理和改善的漏电流

获取原文

摘要

Barium strontium titanate (BST) has gained attention as a high dielectric constant material for high capacitance density. The films are doped with silver, which can reduce the leakage current by an order of magnitude. In this report, we characterize the current mechanisms of doped and undoped BST films as space charge limited (SCL) transport and Schottky emission, respectively. Additionally, by extracting the trap density from the SCL flow, we show that the optimal doping concentration of silver for leakage reduction is calculated, which matches well with experimental data.
机译:钛酸锶钡(BST)作为用于高电容密度的高介电常数材料而受到关注。薄膜中掺有银,可以将泄漏电流降低一个数量级。在本报告中,我们将掺杂和未掺杂BST薄膜的当前机制分别描述为空间电荷受限(SCL)传输和肖特基发射。此外,通过从SCL流中提取陷阱密度,我们表明可以计算出用于减少泄漏的最佳银掺杂浓度,这与实验数据非常吻合。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号