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Comprehensive Study of Copper Nano-Paste for Cu-Cu Bonding

机译:用于铜-铜键合的纳米铜膏的综合研究

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Cu-Cu bond is a prefer solution for shrinking interconnect pitch as it offered lower interconnect resistance with no intermetallic compound risk. Major challenge in Cu-Cu bond is the formation of copper oxide and also the long thermal process. Several approaches had been proposed in the industry to overcome the challenges are diffusion bonding, ultra-sonic bonding, Cu nano-paste, use of Formic acid and argon plasma for copper surface treatment and bit grinding process to enable good Cu-Cu bond. In this paper, we explore the use of Cu nano-paste as the bonding medium between Cu bump and Cu pad. Cu nano-paste is an attractive solution for Cu-Cu bond as it deploy similar approach as conventional solder bump flip chip process. The flux used in conventional solder bump flip chip process is replaced by Cu nano-paste and the conventional reflow oven is replaced by Formic Acid Chamber. We had demonstrated good formic acid process in dealing with Cu nano-paste in terms of low resistance value and prestige copper surface.
机译:Cu-Cu键是缩小互连间距的首选解决方案,因为它提供了较低的互连电阻,并且没有金属间化合物的风险。 Cu-Cu键的主要挑战是氧化铜的形成以及较长的热处理过程。工业界已经提出了几种克服挑战的方法,包括扩散键合,超声波键合,铜纳米糊剂,使用甲酸和氩等离子体进行铜表面处理以及位研磨工艺以实现良好的铜-铜键合。在本文中,我们探索使用铜纳米浆料作为铜凸点和铜垫之间的结合介质。铜纳米糊剂是铜-铜键合的一种有吸引力的解决方案,因为它采用与常规焊料凸点倒装芯片工艺相似的方法。常规的焊料凸点倒装芯片工艺中使用的助焊剂被Cu纳米膏替代,而常规的回流焊炉被甲酸室替代。就低电阻值和良好的铜表面而言,我们已经证明了良好的甲酸处理铜纳米浆料的工艺。

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