Radiation-degradation Analysis and a Circuit Performance Improvement Method for Optoelectronic Field Programmable Gate Array

摘要

A radiation-hardened optoelectronic field programmable gate array (FPGA) consisting of a holographic memory, a laser array, and a standard CMOS process programmable gate array VLSI has already been developed. The optoelectronic FPGA provides soft-error tolerance and can withstand an over 1 Grad total-ionizing-dose. However, the degradation of the optoelectronic FPGA is not small and cannot be neglected. Propagation delay and power consumption increase along with increasing total-ionizing-dose. This paper presents the degradation measurement results of an optoelectronic radiation-hardened FPGA and a method to improve its performance.