Switched-Capacitor-Based Nanosecond Pulse Generator Using SiC MOSFET

摘要

This paper proposes a high voltage pulse generator that employs a switched-capacitor topology. The proposed topology uses H-bridge circuits with SiC MOSFETs which can generate a bipolar nanosecond pulse. Then, the H-bridges of the proposed topology are cascaded to generate high voltage nanosecond pulse with ultrafast dv/dt. Operating principle and circuit analysis of the proposed topology are presented. PSIM and PSpice simulations have been carried out to generate 4.8 kV pulses verifying the proposed topology and control system.