Ultra-High Power Density Full-SiC Boost Converter Enabled by Advanced 3D-Printing Techniques

摘要

In this paper, a bidirectional boost converter featuring a very high power density of more than 55 kW/dm³ is presented. The high level of integration is enabled by the use of SiC MOSFETs operated at a switching frequency of 450 kHz and by advanced 3D-printing techniques used to produce a miniature pin-fin fluid cooler for the dissipation of transistor and inductor losses. In conjunction with power inductors, which are based on 3D-printed bobbins and optimized for high-frequency operation, this allows power densities to be achieved that significantly exceed the state of the art.