首页> 外文会议>International Workshop on Active-Matrix Flatpanel Displays and Devices >CdTe Thin Film PV: How Has the Technology Evolved and What Challenges Lie Ahead
【24h】

CdTe Thin Film PV: How Has the Technology Evolved and What Challenges Lie Ahead

机译:CdTe薄膜光伏:技术如何发展以及未来面临的挑战

获取原文

摘要

This paper reviews the evolution of CdTe photovoltaics since the first CdTe/CdS solar cells were reported in the early 70's with modest efficiencies (~5%). Today's commercial CdTe thin film modules have areas of 2.5 m2 and efficiencies of 17-18%; small area cells are over 22% efficiency. In reaching this performance, the typical/original CdTe/CdS hetero-structure evolved into a CdTe/Cd(Se)Te/MZO (Magnesium Zinc Oxide). The technology continues to rely on a post-deposition heat-treatment (in the presence of CdCl2), and the use of Cu (p-type dopant) for the formation of the back contact. Advancing performance to higher levels will depend on the CdTe community's ability to address key device and material properties (net p-type doping) that limit the cell's open circuit voltage to 0.9 Volts.
机译:本文回顾了CdTe光伏技术的发展,因为在70年代初以适度的效率(〜5%)报道了首批CdTe / CdS太阳能电池。当今的商用CdTe薄膜模块的面积为2.5 m 2 效率为17-18%;小面积电池的效率超过22%。为了达到这一性能,典型/原始的CdTe / CdS异质结构演变为CdTe / Cd(Se)Te / MZO(氧化镁锌)。该技术继续依靠沉积后热处理(在CdCl存在下) 2 ),并使用Cu(p型掺杂剂)形成背接触。将性能提升到更高水平将取决于CdTe社区解决关键器件和材料特性(净p型掺杂)的能力,这些关键器件和材料特性将电池的开路电压限制在0.9伏。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号