Silicon Nitride Waveguiding for Prospective Technologies at the 2 μm Waveband

摘要

Of late, the 2 μm waveband has gained significant recognition in terms of enabling potential key technological applications. In response, we propose the Si3N4-SOI platform at the 2 μm waveband. The insertion loss of the Si-Si3N4 adiabatic interlayer coupler is characterized to be 0.05 dB/transition. Si3N4 waveguide propagation losses as low as 1.59 dB/cm have been achieved.